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| SFH 229 SFH 229 FA Silizium-PIN-Fotodiode mit sehr kurzer Schaltzeit Silicon PIN Photodiode with Very Short Switching Time SFH 229 SFH 229 FA Mae in mm, wenn nicht anders angegeben/Dimensions in mm, unless otherwise specified. Wesentliche Merkmale q Speziell geeignet fur Anwendungen im Bereich von 380 nm bis 1100 nm (SFH 229) und bei 880 nm (SFH 229 FA) q Kurze Schaltzeit (typ. 10 ns) q 3 mm-Plastikbauform im LED-Gehause q Auch gegurtet lieferbar Anwendungen q Lichtschranken fur Gleich- und Wechselbetrieb q Industrieelektronik q "Messen/Steuern/Regeln" Features q Especially suitable for applications from 380 nm to 1100 nm (SFH 229) and of 880 nm (SFH 229 FA) q Short switching time (typ. 10 ns) q 3 mm LED plastic package q Also available on tape Applications q Photointerrupters q Industrial electronics q For control and drive circuits Typ (*vorher) Type (*formerly) SFH 229 SFH 229 FA (*SFH 229 F) Bestellnummer Ordering Code Q62702-P215 Q62702-P216 Semiconductor Group 1 01.97 feof6447 feo06447 SFH 229 SFH 229 FA Grenzwerte Maximum Ratings Bezeichnung Description Betriebs- und Lagertemperatur Operating and storage temperature range Lottemperatur (Lotstelle 2 mm vom Gehause entfernt bei Lotzeit t 3 s) Soldering temperature in 2 mm distance from case bottom (t 3 s) Sperrspannung Reverse voltage Verlustleistung Total power dissipation Symbol Symbol Wert Value - 55 ... + 100 230 Einheit Unit C C Top; Tstg TS VR Ptot 20 150 V mW Kennwerte (TA = 25 C) Characteristics Bezeichnung Description Fotoempfindlichkeit Spectral sensitivity VR = 5 V, Normlicht/standard light A, T = 2856 K, VR = 5 V, = 950 nm, Ee = 1 mW/cm2 Wellenlange der max. Fotoempfindlichkeit Wavelength of max. sensitivity Spektraler Bereich der Fotoempfindlichkeit S = 10 % von Smax Spectral range of sensitivity S = 10 % of Smax Bestrahlungsempfindliche Flache Radiant sensitive area Abmessung der bestrahlungsempfindlichen Flache Dimensions of radiant sensitive area Abstand Chipoberflache zu Gehauseoberflache Distance chip front to case surface Symbol Symbol SFH 229 Wert Value SFH 229 FA Einheit Unit S S S max 28 ( 18) - 860 - 20 ( 10.8) 900 nA/Ix A nm nm 380 ... 1100 730 ... 1100 A LxB LxW H 0.3 0.56 x 0.56 0.3 0.56 x 0.56 mm2 mm x mm 2.4 ... 2.8 2.4 ... 2.8 mm Semiconductor Group 2 SFH 229 SFH 229 FA Kennwerte (TA = 25 C) Characteristics (cont'd) Bezeichnung Description Halbwinkel Half angle Dunkelstrom, VR = 10 V Dark current Spektrale Fotoempfindlichkeit, = 850 nm Spectral sensitivity Quantenausbeute, = 850 nm Quantum yield Leerlaufspannung Open-circuit voltage Ev = 1000 Ix, Normlicht/standard light A, T = 2856 K Ee = 0.5 mW/cm2, = 950 nm Kurzschlustrom Short-circuit current Ev = 1000 Ix, Normlicht/standard light A, T = 2856 K Ee = 0.5 mW/cm2, = 950 nm Symbol Symbol SFH 229 17 50 ( 5000) 0.62 0.90 Wert Value SFH 229 FA 17 50 ( 5000) 0.60 0.88 Grad deg. pA A/W Electrons Photon Einheit Unit IR S VO VO 450 ( 400) - - 420 ( 370) mV mV ISC ISC 27 - 10 - 9 10 A A ns Anstiegs- und Abfallzeit des Fotostromes t r, t f Rise and fall time of the photocurrent RL = 50 ; VR = 10 V; = 850 nm; Ip = 800 A Durchlaspannung, IF = 100 mA, E = 0 Forward voltage Kapazitat, VR = 0 V, f = 1 MHz, E = 0 Capacitance Temperaturkoeffizient von VO Temperature coefficient of VO Temperaturkoeffizient von ISC Temperature coefficient of ISC Normlicht/standard light A = 950 nm VF C0 TCV TCI 1.3 13 - 2.6 1.3 13 - 2.6 V pF mV/K %/K 0.18 - - 0.2 Semiconductor Group 3 SFH 229 SFH 229 FA Kennwerte (TA = 25 C) Characteristics (cont'd) Bezeichnung Description Rauschaquivalente Strahlungsleistung Noise equivalent power VR = 10 V, = 850 nm Nachweisgrenze, VR = 10 V, = 850 nm Detection limit Symbol Symbol SFH 229 Wert Value SFH 229 FA 6.5 x 10- 15 W Hz cm * Hz W 6.5 x 10- 15 Einheit Unit NEP D* 8.4 x 1012 8.4 x 1012 Directional characteristics Srel = f () Semiconductor Group 4 SFH 229 SFH 229 FA Relative spectral sensitivity Srel = f () SFH 229 Relative spectral sensitivity Srel = f () SFH 229 FA Photocurrent IP = f (Ev), VR = 5 V Open-circuit voltage VO = f (Ev) SFH 229 Photocurrent IP = f (Ee), VR = 5 V Open-circuit voltage VO = f (Ee) SFH 229 FA Total power dissipation Ptot = f (TA) Dark current IR = f (VR), E = 0 Capacitance C = f (VR), f = 1 MHZ, E = 0 Dark current IR = f (TA), VR = 10 V, E = 0 Semiconductor Group 5 |
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